Initial operation of a large-scale Plasma Source Ion Implantation experiment
Conference
·
OSTI ID:10188586
In Plasma Source Ion Implantation (PSII), a workpiece to be implanted is immersed in a weakly ionized plasma and pulsed to a high negative voltage. Plasma ions are accelerated toward the workpiece and implanted in its surface. Experimental PSII results reported in the literature have been for small workpieces. A large scale PSII experiment has recently been assembled at Los Alamos, in which stainless steel and aluminum workpieces with surface areas over 4 m{sup 2} have been implanted in a 1.5 m-diameter, 4.6 m-length cylindrical vacuum chamber. Initial implants have been performed at 50 kV with 20 {mu}s pulses of 53 A peak current, repeated at 500 Hz, although the pulse modulator will eventually supply 120 kV pulses of 60 A peak current at 2 kHz. A 1,000 W, 13.56 MHz capacitively-coupled source produces nitrogen plasma densities in the 10{sup 15} m{sup {minus}3} range at neutral pressures as low as 0.02 mtorr. A variety of antenna configurations have been tried, with and without axial magnetic fields of up to 60 gauss. Measurements of sheath expansion, modulator voltage and current, and plasma density fill-in following a pulse are presented. The authors consider secondary electron emission, x-ray production, workpiece arcing, implant conformality, and workpiece and chamber heating.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 10188586
- Report Number(s):
- LA-UR--93-3216; CONF-9308156--2; ON: DE94000805
- Country of Publication:
- United States
- Language:
- English
Similar Records
Initial operation of a large-scale plasma source ion implantation experiment
Recent results from a large-scale plasma source ion implantation experiment
Sheath overlap during large scale plasma source ion implantation
Journal Article
·
Mon Feb 28 23:00:00 EST 1994
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·
OSTI ID:5118782
Recent results from a large-scale plasma source ion implantation experiment
Conference
·
Fri Dec 30 23:00:00 EST 1994
·
OSTI ID:42985
Sheath overlap during large scale plasma source ion implantation
Conference
·
Wed Dec 30 23:00:00 EST 1998
·
OSTI ID:346843