Gate oxide shorts in nMOS transistors: Electrical properties and lifetime prediction method
Conference
·
OSTI ID:10183078
- Univ. of New Mexico, Albuquerque, NM (United States). Electrical and Computer Engineering Dept.
- Sandia National Labs., Albuquerque, NM (United States)
Degradation in nMOS transistors from gate oxide shorts is dependent upon oxide trapping and interface state generation. Three distinct damage mechanisms were identified, including generation of: (1) electron traps in the bulk oxide by the injected holes, N{sub ox,h}, (2) electron traps in the bulk oxide by the injected electrons, N{sub ox,e}, and (3) interface states, N{sub ss}. The three damage mechanisms are incorporated into a device lifetime prediction method.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10183078
- Report Number(s):
- SAND--94-2008C; CONF-9410199--1; ON: DE94018904
- Country of Publication:
- United States
- Language:
- English
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