Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate

Journal Article · Fri Jun 15 00:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618060027· OSTI ID:22749920

Mokrushina, S. A. ^[1]

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1. St. Petersburg State Electrotechnical University “LETI” (Russian Federation)

A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n- and p-channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.

• OSTI ID: 22749920
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
ELECTRON BEAM INJECTION
ELECTRON CAPTURE
SILICON OXIDES
TUNNEL EFFECT