Carrier doping and interlayer coupling in HTSC single crystals

Technical Report · Thu Sep 01 04:00:00 EDT 1994

DOI:https://doi.org/10.2172/10181582· OSTI ID:10181582

Kishio, K; Shimoyama, J; Kimura, T; Kotaka, Y; Kitazawa, K ^[1]; Yamafuji, K ^[2]; Li, Q; Suenaga, M ^[3]

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1. Univ. of Tokyo (Japan). Dept. of Applied Chemistry
2. Kyushu Univ., Fukuoka (Japan). Dept. of Electronics
3. Brookhaven National Lab., Upton, NY (United States). Div. of Materials Science

Experimental results of the effect of carrier doping on the irreversibility lines in (La,Sr){sub 2}CuO{sub 4{minus}{delta}} and Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8 + {delta}} single crystals are summarized. As a function of Sr or oxygen contents, systematic and dramatic widening of the irreversible regions in the B {minus} T phase diagram was observed in both systems. The present study suggests the critical importance of carrier concentration which directly affects the interlayer coupling strength and dimensionality of the flux line lattice in all the layered HTSC compounds as a universal feature.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10181582
• Report Number(s): BNL--60756; CONF-940701--20; ON: DE94018637
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360207
BISMUTH OXIDES
CALCIUM OXIDES
CARRIER DENSITY
CHARGE CARRIERS
COPPER OXIDES
CRITICAL FIELD
DOPED MATERIALS
EXPERIMENTAL DATA
HIGH-TC SUPERCONDUCTORS
LANTHANUM OXIDES
MAGNETIC FLUX
MAGNETIC PROPERTIES
STRONTIUM OXIDES
TRANSITION TEMPERATURE