Ion implantation effects in silicon carbide

Conference · Sat Aug 01 04:00:00 EDT 1992

OSTI ID:10180740

McHargue, C J ^[1]; Williams, J M ^[2]

---

1. Tennessee Univ., Knoxville, TN (United States)
2. Oak Ridge National Lab., TN (United States)

Results from a program, on ion implantation effects in {alpha} and {beta} silicon carbide will be summarized. Silicon carbide is easily amorphized by ion implantation at room temperature. Amorphization as determined by Rutherford backscattering spectrometry (RBS) occurs for damage energies of about 20 eV/atom, corresponding to 0.2 to 0.3 displacements per atom (dpa), at room temperature. Implantation at higher temperatures ({approx}500{degrees}C or above) does not produce an amorphous region for damage levels as high as 17 dpa. Recovery of damage at the subamorphous damage level is fairly complete by 1000{degrees}C. Epitaxial regrowth after amorphization occurs over a very narrow temperature range at {approx}1500{degrees}C in an almost ``explosive`` fashion. Damage and amorphization are accompanied by swelling of up to 15%. The hardness and elastic modulus values of amorphous SiC are 40% and 70%, respectively, of the unimplanted single crystalline values, but before amorphization, the hardness first increases during the early damage phase and then decreases upon amorphization. The oxidation and chemical etching rates of the amorphous state are higher than for crystalline material. Amorphization kinetics, annealing kinetics and property changes are broadly compatible with the idea of a critical accumulation model for amorphization.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10180740
• Report Number(s): CONF-9209200--2; ON: DE92041306
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206
665300
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANNEALING
CHROMIUM IONS
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
ION IMPLANTATION
KEV RANGE 10-100
KEV RANGE 100-1000
NITROGEN IONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SILICON CARBIDES
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY