Silicon-based visible and near-infrared optoelectric devices

Mazur, Eric

Silicon-based visible and near-infrared optoelectric devices

Patent · 08 February 2011

OSTI ID:1018046

Mazur, Eric ^[1]

Concord, MA

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

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Research Organization:: Harvard College (Cambridge, MA)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC36-01GO11051

Assignee:: President and Fellows of Harvard College (Cambridge, MA)

Patent Number(s):: 7,884,439

Application Number:: 12/365,513

OSTI ID:: 1018046

Country of Publication:: United States

Language:: English

References (20)

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