skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon-based visible and near-infrared optoelectric devices

Abstract

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Inventors:
;
Publication Date:
Research Org.:
Harvard Univ., Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1240625
Patent Number(s):
9,276,143
Application Number:
14/100,954
Assignee:
President And Fellows Of Harvard College (Cambridge, MA)
DOE Contract Number:  
FC36-01GO11051
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Dec 09
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats

Mazur, Eric, and Carey, James Edward. Silicon-based visible and near-infrared optoelectric devices. United States: N. p., 2016. Web.
Mazur, Eric, & Carey, James Edward. Silicon-based visible and near-infrared optoelectric devices. United States.
Mazur, Eric, and Carey, James Edward. 2016. "Silicon-based visible and near-infrared optoelectric devices". United States. https://www.osti.gov/servlets/purl/1240625.
@article{osti_1240625,
title = {Silicon-based visible and near-infrared optoelectric devices},
author = {Mazur, Eric and Carey, James Edward},
abstractNote = {In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.},
doi = {},
url = {https://www.osti.gov/biblio/1240625}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {3}
}

Works referenced in this record:

Femtosecond laser-assisted microstructuring of silicon for novel detector, sensing and display technologies
conference, January 2002

  • Carey, J. E.; Mazur, E.
  • LEOS 2002. 2002 IEEE/LEOS Annual Meeting Conference. 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society
  • https://doi.org/10.1109/LEOS.2002.1133936

Femtosecond laser-assisted microstructuring of silicon for novel detector, sensing and display technologies
conference, January 2003

  • Carey, J. E.; Mazur, E.
  • 2003 IEEE LEOS Annual Meeting Conference Proceedings, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.
  • https://doi.org/10.1109/LEOS.2003.1252883

Fabrication of micrometer-sized conical field emitters using femtosecond laser-assisted etching of silicon
conference, January 2001


Field emission from silicon microstructures formed by femtosecond laser assisted etching
conference, January 2001

  • Carey, J. E.; Zhao, L.; Wu, C.
  • CLEO 2001. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest, Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170)
  • https://doi.org/10.1109/CLEO.2001.948159

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon
journal, March 2004


Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation
journal, November 2004


Formation of conical microstructures upon laser evaporation of solids
journal, August 2001


Surface microstructuring and long-range ordering of silicon nanoparticles
journal, May 2002


Femtosecond laser-induced formation of spikes on silicon
journal, April 2000


Microstructuring of silicon with femtosecond laser pulses
journal, September 1998


Novel conical microstructures created in silicon with femtosecond laser pulses
conference, January 1998

  • Tsing-Hua Her, ; Finlay, R. J.; Wu, C.
  • Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178)
  • https://doi.org/10.1109/CLEO.1998.676564

Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation
journal, April 1999


Surface nanostructuring of silicon
journal, July 2003


Dynamics of the hydrodynamical growth of columns on silicon exposed to ArF excimer-laser irradiation
journal, January 1998


Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation
journal, July 1996


Temperature dependence of photoluminescence in noncrystalline silicon
conference, June 2004

  • Serpenguzel, Ali; Bilici, Temel; Inanc, Ibrahim
  • Integrated Optoelectronic Devices 2004: Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII, Vol. 5349
  • https://doi.org/10.1117/12.529549

Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask
journal, March 2003


Near-unity below-band-gap absorption by microstructured silicon
journal, March 2001


Visible luminescence from silicon surfaces microstructured in air
journal, September 2002