Time-of-flight detector for heavy ion backscattering spectrometry

Technical Report · Thu Mar 31 23:00:00 EST 1994

DOI:https://doi.org/10.2172/10168420· OSTI ID:10168420

Knapp, J A; Banks, J C; Doyle, B L ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States). Ion Solid Interactions and Defect Physics Dept.

This report describes the results of a two-year laboratory directed research and development project to explore advanced concepts in Heavy Ion Backscattering Spectrometry (HIBS), undertaken with the goal of extending the sensitivity of this relatively new technique to levels unattainable by any other existing trace element surface analysis. Improvements in sensitivity are required for the application of HIBS to contamination control in the microelectronics industry. Tools with sensitivity approaching 10{sup 8} atoms/cm{sup 2} are expected to be essential for enabling advanced IC production by the year 2000. During the project the authors developed a new analysis chamber with channeling goniometer and a prototype time-of-flight detector with a demonstrated sensitivity of {approximately} 5 {times} 10{sup 8} atoms/cm{sup 2} for Au on Si and {approximately} 5 {times} 10{sup 10} for Fe, and sufficient mass resolution to separate contributions from Fe and Cu.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10168420
• Report Number(s): SAND--94-0391; ON: DE94015600; BR: GB0103012
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420500
426000
BACKSCATTERING
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
HEAVY ION ACCELERATORS
IMPURITIES
MATERIALS TESTING
MICROELECTRONIC CIRCUITS
NONDESTRUCTIVE ANALYSIS
PERFORMANCE TESTING
QUALITY CONTROL
RUTHERFORD SCATTERING
SURFACE PROPERTIES
TIME-OF-FLIGHT SPECTROMETERS