Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

Li, Ting

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

Patent · Tue Apr 26 04:00:00 EDT 2011

OSTI ID:1016672

Li, Ting ^[1]

Ventura, CA

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

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Research Organization:: Cree, Inc. (Durham, NC)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-03NT41943

Assignee:: Cree, Inc. (Durham, NC)

Patent Number(s):: 7,932,106

Application Number:: US Patent Application 11/498,418

OSTI ID:: 1016672

Country of Publication:: United States

Language:: English

References (20)

High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures Khan, F. A.; Adesida, I. Applied Physics Letters, Vol. 75, Issue 15 https://doi.org/10.1063/1.124986	journal	October 1999
Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup Kim, Jong Kyu; Luo, Hong; Schubert, Eric Fred Japanese Journal of Applied Physics, Vol. 44, Issue No. 21 https://doi.org/10.1143/JJAP.44.L649	journal	April 2005
Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes Windisch, R.; Rooman, C.; Dutta, B. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2 https://doi.org/10.1109/2944.999177	journal	January 2002
Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN Hsu, David S. Y.; Kim, Chul Soo; Eddy, Charles R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 4 https://doi.org/10.1116/1.1978896	journal	January 2005
Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes Windisch, R.; Rooman, C.; Meinlschmidt, S. Applied Physics Letters, Vol. 79, Issue 15 https://doi.org/10.1063/1.1397758	journal	October 2001
New UV Light Emitter Based on AlGaN Heterostructures with Graded Electron and Hole Injectors Johnson, M. A. L.; Long, J. P.; Schetzina, J. F. MRS Proceedings, Vol. 743 https://doi.org/10.1557/PROC-743-L7.4	journal	January 2002
Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers Simon, John; Wang, Kejia; Xing, Huili MRS Proceedings, Vol. 892 https://doi.org/10.1557/PROC-0892-FF17-04	journal	January 2005
Blue electroluminescence from porous silicon carbide Mimura, Hidenori; Matsumoto, Takahiro; Kanemitsu, Yoshihiko Applied Physics Letters, Vol. 65, Issue 26 https://doi.org/10.1063/1.112388	journal	December 1994
Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs Asbeck, P. M.; Yu, E. T.; Lau, S. S. Solid-State Electronics, Vol. 44, Issue 2 https://doi.org/10.1016/S0038-1101(99)00226-9	journal	February 2000
Nanoparticle Arrays on Surfaces Fabricated Using Anodic Alumina Films as Templates Sander, M. S.; Tan, L. -S. Advanced Functional Materials, Vol. 13, Issue 5 https://doi.org/10.1002/adfm.200304290	journal	May 2003
Plasma Etching of β-SiC Kelner, G. Journal of The Electrochemical Society, Vol. 134, Issue 1 https://doi.org/10.1149/1.2100419	journal	January 1987
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography Windisch, R.; Dutta, B.; Kuijk, M. IEEE Transactions on Electron Devices, Vol. 47, Issue 7 https://doi.org/10.1109/16.848298	journal	July 2000
Nonresonant-cavity light-emitting diodes Windisch, Reiner; Kuijk, Maarten; Dutta, Barundeb Symposium on Integrated Optoelectronics, SPIE Proceedings https://doi.org/10.1117/12.382829	conference	April 2000
High brightness AlGaInP light-emitting diodes Streubel, K.; Linder, N.; Wirth, R. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2 https://doi.org/10.1109/2944.999187	journal	January 2002
Direct observation of porous SiC formed by anodization in HF Shor, Joseph S.; Grimberg, Ilana; Weiss, Ben‐Zion Applied Physics Letters, Vol. 62, Issue 22 https://doi.org/10.1063/1.109226	journal	May 1993
Crystallographic Etching Phenomenon during Plasma Etching of SiC (100) Thin Films in SF[sub 6] Palmour, J. W. Journal of The Electrochemical Society, Vol. 136, Issue 2 https://doi.org/10.1149/1.2096660	journal	January 1989
Experimental investigation of dependence of electrical characteristics on device parameters in trench MOS barrier Schottky diodes Sakai, T.; Matsumoto, S.; Yachi, T. International Symposium on Power Semiconductor Devices and IC's, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) https://doi.org/10.1109/ISPSD.1998.702691	conference	January 1998
30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes Schnitzer, I.; Yablonovitch, E.; Caneau, C. Applied Physics Letters, Vol. 63, Issue 16 https://doi.org/10.1063/1.110575	journal	October 1993
Surface, Pore Morphology, and Optical Properties of Porous 4H-SiC Zangooie, S.; Arwin, H. Journal of The Electrochemical Society, Vol. 148, Issue 6 https://doi.org/10.1149/1.1368109	journal	January 2001
High optical quality GaN nanopillar arrays Wang, Y. D.; Chua, S. J.; Tripathy, S. Applied Physics Letters, Vol. 86, Issue 7 https://doi.org/10.1063/1.1861984	journal	January 2005

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