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Optically initiated silicon carbide high voltage switch

Patent ·
OSTI ID:1015203
 [1];  [2];  [1];  [1]
  1. Livermore, CA
  2. Manteca, CA
+ Show Author Affiliations
An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
Research Organization:
Lawrence Livermore National Security, LLC (Livermore, CA)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48;
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
7,893,541
Application Number:
US Patent Application 11/586,468
OSTI ID:
1015203
Country of Publication:
United States
Language:
English

References (6)

4H–SiC photoconductive switching devices for use in high-power applications journal May 2003
Electric current in dc surface flashover in vacuum journal March 1999
Methods and configurations for improving photo-conductive switch performance
  • Nunnally, W. C.; Cooperstock, D.
  • Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop. International Power Modulator Conference, Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. https://doi.org/10.1109/MODSYM.2002.1189446
conference January 2002
High gradient insulator technology for the dielectric wall accelerator conference January 1995
Optically induced surface flashover switching for the dielectric wall accelerator conference January 1995
Opportunities for employing silicon carbide in high power photo-switches conference January 2003

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