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Title: Optically initiated silicon carbide high voltage switch

Patent ·
OSTI ID:1015203
 [1];  [2];  [1];  [1]
  1. Livermore, CA
  2. Manteca, CA
+ Show Author Affiliations

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
7,893,541
Application Number:
US Patent Application 11/586,468
OSTI ID:
1015203
Country of Publication:
United States
Language:
English

References (6)

Opportunities for employing silicon carbide in high power photo-switches conference January 2003
High gradient insulator technology for the dielectric wall accelerator conference January 1995
Methods and configurations for improving photo-conductive switch performance
  • Nunnally, W. C.; Cooperstock, D.
  • Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop. International Power Modulator Conference, Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. https://doi.org/10.1109/MODSYM.2002.1189446
conference January 2002
Electric current in dc surface flashover in vacuum journal March 1999
4H–SiC photoconductive switching devices for use in high-power applications journal May 2003
Optically induced surface flashover switching for the dielectric wall accelerator conference January 1995

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