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Title: Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

Abstract

An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

Inventors:
;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1078294
Patent Number(s):
8,258,632
Application Number:
13/171,281
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA) LLNL
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Sullivan, James S., and Hawkins, Steven A. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces. United States: N. p., 2012. Web.
Sullivan, James S., & Hawkins, Steven A. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces. United States.
Sullivan, James S., and Hawkins, Steven A. 2012. "Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces". United States. doi:. https://www.osti.gov/servlets/purl/1078294.
@article{osti_1078294,
title = {Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces},
author = {Sullivan, James S. and Hawkins, Steven A.},
abstractNote = {An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2012,
month = 9
}

Patent:

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  • An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
  • An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
  • An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') thatmore » includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).« less
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