The application of maximum entropy to Z-contrast imaging in a stem
Conference
·
OSTI ID:10148955
Maximum entropy (Gull and Skilling, IEE Proceedings, 131F, 646 (1984)) is an image processing routine based on Bauesian probability which can produce a ``most likely`` image from original data given a particular point spread function. By combining maximum entropy and analysis with incoherent Z-contrast imaging, it is possible to retrieve crystal lattice information at atomic resolution from directly acquired experimental data without the need for preconceived structures. Results are given for simulated and experimentally acquired Z-contrast images of semiconductors (graded SiGe, <110> Si, <110> GaAs) at 300 kV.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400; AC05-76OR00033
- OSTI ID:
- 10148955
- Report Number(s):
- CONF-940766-2; ON: DE94011470
- Resource Relation:
- Conference: 13. international congress on electron microscopy,Paris (France),17-22 Jul 1994; Other Information: PBD: Mar 1994
- Country of Publication:
- United States
- Language:
- English
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PHYSICAL AND ANALYTICAL CHEMISTRY
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ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
ELECTRON MICROSCOPY
IMAGE PROCESSING
SEMICONDUCTOR MATERIALS
STRUCTURAL CHEMICAL ANALYSIS
SILICON
GERMANIUM SILICIDES
GALLIUM ARSENIDES
400101
360602
ACTIVATION, NUCLEAR REACTION, RADIOMETRIC, AND RADIOCHEMICAL PROCEDURES
STRUCTURE AND PHASE STUDIES