Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Defining capabilities of Si and InP photonics.

Conference ·
OSTI ID:1013788

Monolithic photonic integrated circuits (PICs) have a long history reaching back more than 40 years. During that time, and particularly in the past 15 years, the technology has matured and the application space grown to span sophisticated tunable diode lasers, 40 Gb/s electrical-to-optical signal converters with complex data formats, wavelength multiplexors and routers, as well as chemical/biological sensors. Most of this activity has centered in recent years on optical circuits built on either Silicon or InP substrates. This talk will review the three classes of PIC and highlight the unique strengths, and weaknesses, of PICs based on Silicon and InP substrates. Examples will be provided from recent R&D activity.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1013788
Report Number(s):
SAND2010-3143C
Country of Publication:
United States
Language:
English

Similar Records

InP AAC for data compression applications
Journal Article · Mon Apr 01 00:00:00 EDT 2019 · IET Optoelectronics · OSTI ID:1786760

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices
Journal Article · Fri Oct 01 00:00:00 EDT 1982 · IEEE J. Quant. Electron.; (United States) · OSTI ID:5967026

Realization of silicon based dielectrics anti-resonant reflecting optical waveguide (ARROW) on InP by photochemical deposition
Book · Mon Dec 30 23:00:00 EST 1996 · OSTI ID:536229