Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects

Conference · Sun Oct 25 04:00:00 EDT 2009

OSTI ID:1013440

Bolotnikov, A E; Babalola, S; Camarda, G S; Cui, Y; Egarievwe, S U; Hawrami, R; Hossain, A; Yang, G; James, R B

Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers’ drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.

• Research Organization: BROOKHAVEN NATIONAL LABORATORY (BNL)
• Sponsoring Organization: DOE - National Nuclear Security Administration
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1013440
• Report Number(s): BNL--90854-2009-CP; NN2001000
• Country of Publication: United States
• Language: English

Related Subjects

61 RADIATION PROTECTION AND DOSIMETRY
CHARGE CARRIERS
CdZnTe
ELECTRONS
FLUCTUATIONS
POINT DEFECTS
radiation detectors: crystal defects