Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects
Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers’ drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- DOE - National Nuclear Security Administration
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1013440
- Report Number(s):
- BNL-90854-2009-CP; NN2001000; TRN: US1102469
- Resource Relation:
- Conference: 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference; Orlando, Florida; 20091025 through 20091031
- Country of Publication:
- United States
- Language:
- English
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