Long lifetime silicon photoconductive semiconductor switches

Conference · Thu Dec 31 04:00:00 EST 1992

OSTI ID:10133253

Loubriel, G M; Zutavern, F J; Denison, G J; Helgeson, W D; McLaughlin, D L; O`Malley, M W; Sifford, C H; Beavis, L C; Seager, C H ^[1]; Rosen, A ^[2]; Madonna, R G ^[3]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. David Sarnoff Research Center, Princeton, NJ (United States)
3. Grumman Corp., Bethpage, NY (United States). Corporate Technology

We present the results of experiments aimed at improving the lifetime (longevity) of Si photoconductive semiconductor switches (PCSS) . Because damage at the metal-semiconductor interface is the primary damage mechanism in most PCSS, we have tested different contact metallizations. The test setup utilizes: a ND:YAG laser that operates at 540 Hz with 50 NJ, 10 ns FWHM pulses; a circuit that charges a 50 a line in800 ns and discharges it in 20 ns through a 50 a load; and a lateral switch geometry and 0.25 cm by 0.25 cm switches. The contacts examined include: Cr(diffused)-Cr-Mo-Au, Al(diffused)-Cr-Mo-Au, {sup 31}p (ion implanted)-Ti-Pt, Al(diffused)Pt-Ti-Pd-Au, and edge contacts. In the case of the Cr contacts we have tried thicker Mo or Au layers. For the Al contacts we have tried 1 {mu}m and 0.1 pm thick depositions. Most contacts survived 10{sup 7} pulses when switching 32 kv/cm (8 kV over 0.25 cm). The Al diffused went up to 44 kv/cm (1 {times} 10{sup 5} pulses). The implanted P switch was switched 2.2 {times} 10{sup 7} times at 44 kv/cm and 0.9 {times} 10{sup 6} times at 48 kv/cm.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10133253
• Report Number(s): SAND--92-1202C; CONF-930159--13; ON: DE93006757; CNN: Contract F29601-91-C0046
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
ELECTRIC CONTACTS
ION IMPLANTATION
LIFETIME
PHOSPHORUS 31
PHOTOCONDUCTIVITY
SEMICONDUCTOR SWITCHES