Analytical solutions of minimum ionization particle induced current shapes of silicon detectors and simulation of charge collection properties

Conference · Mon Nov 01 00:00:00 EST 1993

OSTI ID:10129450

Eremin, V ^[1]; Chen, W; Li, Z ^[2]

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1. A.F. Ioffe Physico-Technical Inst., of Academy of Sciences of Russia, St. Petersburg, (Russian Federation)
2. Brookhaven National Lab., Upton, NY (United States)

A new analytical, one dimensional method to obtain the induced current shapes and simulation of chasrge shapes for p{sup +} {minus}n{minus}n{sup +} silicon detectors in the case of minimum ionization particle has been developed here. jExact solutions have been found for both electron and hole current shapes. Simulations of induced charge shapes of detectors have also been given. The results of this work are consistent with the earlier work where a semi-analytical method had been used.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10129450
• Report Number(s): BNL-49816; CONF-931107-35; ON: DE94007523; TRN: 94:006439
• Resource Relation: Conference: 1993 IEEE nuclear science symposium and medical imaging conference,San Francisco, CA (United States),2-5 Nov 1993; Other Information: PBD: Nov 1993
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
43 PARTICLE ACCELERATORS
SI SEMICONDUCTOR DETECTORS
CHARGE COLLECTION
PHYSICAL RADIATION EFFECTS
IONIZATION
NEUTRON FLUENCE
TRAPPING
ANALYTICAL SOLUTION
440104
430303
HIGH ENERGY PHYSICS INSTRUMENTATION
EXPERIMENTAL FACILITIES AND EQUIPMENT