Effects of oxidation and creep damage mechanisms on creep behavior in HIPed silicon nitrides
Conference
·
OSTI ID:10122404
The creep resistance of hot-isostatically pressed (HIPed) silicon nitride materials is ultimately dictated by its susceptibility to creep enhanced damage (e.g. cavitation) and oxidation induced damage. The evolution of these simultaneously occurring events has been examined in several HIPed silicon nitrides which were tested in tension at elevated temperatures. The activity and extent of each have found to be functions of several variables. These parameters and their roles are discussed and include the following: initial {alpha}/{beta} ratio of silicon nitride grains, reaction of stable/unstable phases in the as-received material, percentage and type of sintering aid, and grain boundary crystallinity, impurity content, and viscosity.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10122404
- Report Number(s):
- CONF-940135--3; ON: DE94006559
- Country of Publication:
- United States
- Language:
- English
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