Structural characterization of semiconductor heterostructures by atomic resolution Z-contrast imaging at 300kV

Conference · Wed Dec 01 00:00:00 EST 1993

OSTI ID:10122344

McGibbon, A J; Pennycook, S J ^[1]; Wasilewski, Z ^[2]

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1. Oak Ridge National Lab., TN (United States)
2. National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

By applying Z-contrast imaging to study of a GaAs/AlGaAs multilayer using a newly developed 300kV scanning transmission electron microscope, we show that it is possible to directly observe the interlocking group III and group V sub-lattices on a column-by-column level. In addition to direct observation of structural polarity in the <110> orientation, we show that, by using a maximum entropy approach to image processing, the experimentally acquired data can provide direct information on interface structures at atomic resolution.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10122344
• Report Number(s): CONF-931108-68; ON: DE94006561
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: Dec 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
42 ENGINEERING
HETEROJUNCTIONS
STRUCTURAL CHEMICAL ANALYSIS
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
LAYERS
TRANSMISSION ELECTRON MICROSCOPY
SCANNING ELECTRON MICROSCOPY
IMAGE PROCESSING
INTERFACES
360602
400101
426000
STRUCTURE AND PHASE STUDIES
ACTIVATION, NUCLEAR REACTION, RADIOMETRIC, AND RADIOCHEMICAL PROCEDURES
COMPONENTS
ELECTRON DEVICES AND CIRCUITS