Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K
Conference
·
OSTI ID:10119184
- State Univ. of New York, Stony Brook, NY (United States). Dept. of Chemistry
- Brookhaven National Lab., Upton, NY (United States)
This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B{sub 2}H{sub 6} and ammonia (NH{sub 3}) or only B{sub 2}H{sub 6}, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 {Angstrom} thick.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10119184
- Report Number(s):
- BNL--49904; CONF-931108--46; ON: DE94006058; CNN: Grant DMR 9258544
- Country of Publication:
- United States
- Language:
- English
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