Effect of oxygen plasma cleaning on thin film resistors
An investigation was performed to determine the effect of oxygen plasma cleaning on thin film network (TFN) resistors for the purpose of proving-in plasma cleaning of hybrid microcircuits (HMCs) to remove flux stains. The investigation was performed using stabilized production thin film edge monitors as test samples. Both tantalum nitride and titanium palladium resistors were evaluated. The plasma cleaning was performed in a Branson/IPC S2050T-11020 plasma cleaner using a schedule of 0.7 torr oxygen, 150 watts power, for 30 min. The cleaned edge monitors were cleaned twice to represent a worst case condition. It was determined that the tantalum nitride edge monitor resistors tested changed on average + 0.029% in value due to plasma cleaning and changed on average + 0.040% more in value after life testing. The titanium palladium edge monitor resistors tested were significantly affected by plasma cleaning, but the percent change is less clear due to the difficulty encountered in accurately measuring resistance changes on these resistors. The titanium palladium resistors` shift after plasma cleaning may not be significant, but the plasma cleaned resistors did change on average {minus}0.867% in value after life testing compared to the uncleaned resistors.
- Research Organization:
- Allied-Signal Aerospace Co., Kansas City, MO (United States). Kansas City Div.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00613
- OSTI ID:
- 10107716
- Report Number(s):
- KCP--613-4507; ON: DE92004884
- Country of Publication:
- United States
- Language:
- English
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