Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

Conference · Sun Jan 01 04:00:00 EST 1995

OSTI ID:10106644

Cuevas, A ^[1]; Giroult-Matlakowski, G; DuBols, C ^[2]; Basore, P A ^[3]; King, R R ^[4]

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1. Australian National Univ., Canberra, CT (United States). Faculty of Engineering
2. CNRS, Villeurbanne (France). Laboratoire de Physique de la Matiere
3. Sandia National Labs., Albuquerque, NM (United States)
4. Siemens Solar Industries, Camarillo, CA (United States)

An analytical procedure to extract the surface recombination velocity of the SiO{sub 2}/n type silicon interface, S{sub p}, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S{sub p} are significantly affected by the assumed material parameters for highly doped silicon, t{sub p}, {mu}{sub p} and {Delta}E{sub g}{sup app}. Updated values for these parameters are used to obtain the dependence of S{sub p} on the phosphorus concentration, N{sub D}, using both previous and new experimental data. The new evidence supports the finding that S{sub p} increases strongly with N{sub D}.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10106644
• Report Number(s): SAND--94-1563C; CONF-941203--10; ON: DE95004539
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501
36 MATERIALS SCIENCE
360104
DOPED MATERIALS
PHOSPHORUS
PHOTOVOLTAIC CONVERSION
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR DEVICES
SILICON
SILICON OXIDES
SILICON SOLAR CELLS
SURFACE PROPERTIES