Studies of thin-film growth, adsorption, and oxidation by in situ, real-time, and ex situ ion beam analysis

Conference · Mon Nov 01 04:00:00 EST 1993

OSTI ID:10104589

Lin, Y ^[1]; Krauss, A R; Gruen, D M ^[1]; Nishino, Y ^[1]; Chang, R P.H. ^[2]; Auciello, O ^[3]; Shultz, J A ^[4]

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1. Argonne National Lab., IL (United States)
2. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science
3. Microelectronics Center of North Carolina, Research Triangle Park, NC (United States)
4. Ionwerks, Inc., Houston, TX (United States)

We have developed a time-of-flight (TOF) ion scattering and direct recoil spectrometer (ISS/DRS) to study the surface composition and reconstruction of metals, metal-oxides, and semiconductors, and to provide in situ characterization of the thin-film deposition process. In situ, real-time study of Pb, Zr, and Ru ultrathin films produced by ion beam sputter deposition is presented as demonstration of pulsed ion beam surface analysis (PIBSA) as a means of characterizing monolayer and submonolayer growth, both in UHV and in mTorr oxygen background. The capability of performing surface analysis at pressures >10{sup {minus}3} Torr is unique to pulsed ion beam surface analysis among surface analytical methods and enables the in situ monitoring of oxide thin-film growth processes and surface-gas phase reactions. Using angular-resolved ISS (ARISS), combined with Auger electron spectroscopy (AES), we studied the oxygen adsorption and reconstruction of (001) oriented InSb thin-film surfaces. It was found that the adsorption of molecular oxygen on the InSb (001) surface is consistent with the Langmuir model. Oxygen adsorption preferentially occurs on the antimony sites corresponding to the extension of the lattice into the vacuum and reduces the inward contraction of the first two layers of the clean InSb (001) surface relative to the bulk atomic spacing.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 10104589
• Report Number(s): ANL/CHM/CP--81119; CONF-9311104--8; ON: DE94002907
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101
360606
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101
ACTIVATION, NUCLEAR REACTION, RADIOMETRIC, AND RADIOCHEMICAL PROCEDURES
ADSORPTION
ARGON IONS
DEPOSITION
INDIUM ANTIMONIDES
ION BEAMS
ION SCATTERING ANALYSIS
LAYERS
LEAD
OXYGEN
PHYSICAL PROPERTIES
PREPARATION AND FABRICATION
RUTHENIUM
SPUTTERING
SURFACE PROPERTIES
ZIRCONIUM