Charge collection by capacitive influence through isolation oxides.
This paper analyzes the collected charge in heavy ion irradiated MOS structures. The charge generated in the substrate induces a displacement effect which strongly depends on the capacitor structure. Networks of capacitors are particularly sensitive to charge sharing effects. This has important implications for the reliability of SOI and DRAMs which use isolation oxides as a key elementary structure. The buried oxide of present day and future SOI technologies is thick enough to avoid a significant collection from displacement effects. On the other hand, the retention capacitors of trench DRAMs are particularly sensitive to charge release in the substrate. Charge collection on retention capacitors participate to the MBU sensitivity of DRAM.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1005068
- Report Number(s):
- SAND2003-3251J
- Journal Information:
- Proposed for publication in IEEE Transactions on Nuclear Science., Journal Name: Proposed for publication in IEEE Transactions on Nuclear Science. Journal Issue: 6 Vol. 50; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Suppression of ion-induced charge collection against soft-error