Novel application of transmission electron microscopy and scanning capacitance microscopy for defect root cause identification and yield enhancement.
Conference
·
OSTI ID:1004355
No abstract prepared.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1004355
- Report Number(s):
- SAND2003-3024C; TRN: US201103%%424
- Resource Relation:
- Conference: Proposed for presentation at the Conference Proceedings of the 29th International Symposium for Testing and Failure Analysis held November 2-6, 2003 in Santa Clara, CA.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Transmission electron microscopy and scanning capacitance microscopy analysis of dislocation-induced leakages in n-channel I/O transistors.
Analysis of Multilayer Devices for Superconducting Electronics by High Resolution Scanning Transmission Electron Microscopy and Energy Dispersive Spectroscopy.
Scanning Capacitance Microscopy Imaging and Registration of 2-D Donor Devices Fabricated via Scanning Tunneling Microscopy.
Conference
·
Thu Sep 01 00:00:00 EDT 2005
·
OSTI ID:1004355
+3 more
Analysis of Multilayer Devices for Superconducting Electronics by High Resolution Scanning Transmission Electron Microscopy and Energy Dispersive Spectroscopy.
Conference
·
Mon Aug 01 00:00:00 EDT 2016
·
OSTI ID:1004355
Scanning Capacitance Microscopy Imaging and Registration of 2-D Donor Devices Fabricated via Scanning Tunneling Microscopy.
Conference
·
Tue Apr 01 00:00:00 EDT 2014
·
OSTI ID:1004355