Using C₆₀⁺ Sputtering to Improve Detection Limit of Nitrogen in Zinc Oxide
Journal Article
·
· Surface and Interface Analysis, 43(1-2):661-663
C₆₀⁺ sputtering was firstly used to determine depth profile of nitrogen in zinc oxide materials by time-of-flight secondary ion mass spectrometry (ToF-SIMS). Compared to traditional Cs+ sputtering depth profiling, the C₆₀⁺ sputtering provides over 200 times of effective signal intensity and the detection limit is about 10 times better. In addition, our X-ray photoelectron spectroscopy (XPS) results show that sputtering zinc oxide materials by 10 keV C₆₀⁺ leads to very weak carbon deposition at bottom of the sputter crater.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1004024
- Report Number(s):
- PNNL-SA-68663; KP1704020
- Journal Information:
- Surface and Interface Analysis, 43(1-2):661-663, Journal Name: Surface and Interface Analysis, 43(1-2):661-663 Journal Issue: 1-2 Vol. 43; ISSN SIANDQ; ISSN 0142-2421
- Country of Publication:
- United States
- Language:
- English
Similar Records
Molecular Depth Profiling of Sucrose Films: A Comparative Study of C₆₀n⁺ Ions and Traditional Cs⁺ and O₂⁺ Ions
Nanoscale imaging of hydrogen and sodium in alteration layers of corroded glass using ToF-SIMS: Is an auxiliary sputtering ion beam necessary?
An Investigation of Hydrogen Depth Profiling Using ToF-SIMS
Journal Article
·
Thu Oct 15 00:00:00 EDT 2009
· Analytical Chemistry, 81(20):8272-8279
·
OSTI ID:967213
Nanoscale imaging of hydrogen and sodium in alteration layers of corroded glass using ToF-SIMS: Is an auxiliary sputtering ion beam necessary?
Journal Article
·
Thu Oct 11 00:00:00 EDT 2018
· Surface and Interface Analysis
·
OSTI ID:1496802
An Investigation of Hydrogen Depth Profiling Using ToF-SIMS
Journal Article
·
Tue Jan 31 23:00:00 EST 2012
· Surface and Interface Analysis
·
OSTI ID:1034971