Recrystallization and Dielectric Properties of CaHfOx Flms on Si
- University of Florida
- ORNL
The recrystallization and dielectric behavior for amorphous CaHfO{sub x} films on Si substrates has been investigated. Upon conventional annealing in air, the CaHfO{sub x} films remain amorphous up to an annealing temperature of 800 C for annealing times of 1 h. This recrystallization temperature is significantly higher than that reported for HfO{sub 2} subjected to rapid thermal annealing. Metal-insulator-semiconductor structures with Pt gate electrodes were fabricated with various CaHfO{sub x} film thickness for capacitance-voltage and leakage current measurements. From this, the permittivity of CaHfO{sub x} was determined, along with interface layer capacitance for films on Si. The enhanced stability against polycrystalline grain growth, along with the thermodynamic stability of both CaO and HfO{sub 2} in contact with Si, suggests that CaHfO{sub x} may be an attractive gate dielectric for future generation metal-oxide-semiconductor field-effect transistor applications.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1003206
- Journal Information:
- Solid State Electronics, Journal Name: Solid State Electronics Journal Issue: 12 Vol. 47; ISSN 0038-1101
- Country of Publication:
- United States
- Language:
- English
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