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Title: Sequential circuit design for radiation hardened multiple voltage integrated circuits

Abstract

The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

Inventors:
 [1];  [2]
  1. Phoenix, AZ
  2. (Albuquerque, NM)
Publication Date:
Research Org.:
STC.UNM (Albuquerque, NM)
Sponsoring Org.:
USDOE
OSTI Identifier:
1003007
Patent Number(s):
7,622,976
Application Number:
11/774,380
Assignee:
STC.UNM (Albuquerque, NM) ALO
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Clark, Lawrence T, and McIver, III, John K. Sequential circuit design for radiation hardened multiple voltage integrated circuits. United States: N. p., 2009. Web.
Clark, Lawrence T, & McIver, III, John K. Sequential circuit design for radiation hardened multiple voltage integrated circuits. United States.
Clark, Lawrence T, and McIver, III, John K. Tue . "Sequential circuit design for radiation hardened multiple voltage integrated circuits". United States. https://www.osti.gov/servlets/purl/1003007.
@article{osti_1003007,
title = {Sequential circuit design for radiation hardened multiple voltage integrated circuits},
author = {Clark, Lawrence T and McIver, III, John K.},
abstractNote = {The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {11}
}

Patent:

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