Time domain spectroscopy of the magnetic field induced metal-insulator transition in n:InSb

Conference · Thu Jan 01 00:00:00 EST 2004

DOI:https://doi.org/10.1063/1.1994550· OSTI ID:977769

Sohn, J Y ^[1]; Gao, X ^[2]; Crooker, S A ^[3]

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1. Jin Young
2. Xuan
3. Scott A.

Temperature (T) and frequency ({omega}) dependent conductivity measurements are reported for n-type indium antimonide (InSb) around the magnetic field induced metal-insulator transition (MIT). For the sample with electron density n = 2.15 x 10{sup 14} cm{sup -3}, the critical field is observed at {approx}0.7 T in dc transport measurements. The frequency dependent conductivity {sigma}({omega}) measured via terahertz time domain spectroscopy indicates a higher critical field {approx}1.2 T. Both {sigma}{sub dc}(T) and {sigma}{sub 1}({omega}) at low temperatures show power law dependence with exponents of {alpha} = 1.2.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE
• OSTI ID: 977769
• Report Number(s): LA-UR-04-5006; TRN: US201012%%713
• Resource Relation: Journal Volume: 772; Conference: Submitted to: 27th International Conference on the Physics of Semiconductors, July 2004, Flagstaff, AZ
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRITICAL FIELD
ELECTRON DENSITY
INDIUM ANTIMONIDES
MAGNETIC FIELDS
PHYSICS
SPECTROSCOPY
TRANSPORT