A Method of Producing Surface Conduction on Ceramic Accelerator Components Using Metal Ion Implantation
An important technique used for the suppression of surface flashover on high voltage DC ceramic insulators as well as for RF windows is that of providing some surface conduction to bleed off accumulated surface charge. We have used metal ion implantation to modify the surface of high voltage ceramic vacuum insulators to provide a niform surface resistivity of approximately 5 x 1010 W/square. A vacuum arc ion source based implanter was used to implant Pt at an energy of about 135 keV to doses of up to more than 5 x 1016 ions/cm2 into small ceramic test coupons and also into the inside surface of several ceramic accelerator columns 25 cm I. D. by 28 cm long. Here we describe the experimental set-up used to do the ion implantation and summarize the results of our exploratory work on implantation into test coupons as well as the implantations of the actual ceramic columns.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-84ER40150
- OSTI ID:
- 954504
- Report Number(s):
- JLAB-ACO-97-10; 7804776; DOE/ER/40150-4442; TRN: US201014%%1179
- Resource Relation:
- Conference: Paper compiled for PAC 97
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical image storage in ion implanted PLZT ceramics
A treatment which inhibits surface flashover in vacuum