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Title: Optical image storage in ion implanted PLZT ceramics

Conference ·
OSTI ID:5220925

Optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-uv light with photon energies greater than the band gas energy of approx. 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform uv illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of greater than or equal to 100:1 and spatial resolution of approx. 10 ..mu..m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. 100 mJ/cm/sup 2/) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. It was found in H, He, and Ar implanted PLZT that the photosensitivity can be significantly increased by ion implantation into the surface to be exposed. The photosensitivity after implantation with 5 x 10/sup 14/ 500 keV Ar/cm/sup 2/ is increased by about three orders of magnitude over that of unimplanted PLZT. The image storage process and the effect of ion implantation is presented along with a phenomenological model which describes the enhancement in photosensitivity obtained by ion implantation. This model takes into account both light- and ion implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with light intensity for ion implanted PLZT.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5220925
Report Number(s):
SAND-80-0729C; CONF-800744-1; TRN: 80-013702
Resource Relation:
Conference: Ion beam modification of materials conference, Albany, NY, USA, 14 Jul 1980
Country of Publication:
United States
Language:
English