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Title: Optical imaging and information storage in ion implanted ferroelectric ceramics

Conference ·
OSTI ID:5889114

Photographic images can be stored in ferroelectric-phase lead lanthanum zirconate titanate (PLZT) ceramics using a novel photoferroelectric effect. These images are nonvolatile but erasable and can be switched from positive to negative by application of an electric field. We have found that the photosensitivity of ferroelectric PLZT is dramatically improved by ion implantation into the surface exposed to image light. For example, the intrinsic photosensitivity to near-UV light is increased by as much as four orders of magnitude by coimplantation with Ar and Ne. The increased photosensitivity results from implantation-induced decreases in dark conductivity and dielectric constant in the implanted layer. Furthermore, the increased photoferroelectric sensitivity has recently been extended from the near-UV to the visible spectrum by implants of Al and Cr. Ion-implanted PLZT is the most sensitive, nonvolatile, selectively-erasable image storage medium currently known.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5889114
Report Number(s):
SAND-81-1515C; CONF-811122-17; ON: DE82003341
Resource Relation:
Conference: Annual meeting of the Materials Research Society, Boston, MA, USA, 16 Nov 1981
Country of Publication:
United States
Language:
English