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Title: Reactive sputter deposition of yttria-stabilized zirconia

Conference ·
OSTI ID:95300

Yttria-stabilized zirconia (YSZ) films are synthesized using reactive de magnetron sputter deposition. A homogeneous alloy of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-0 films. The sputtering conditions of gas flow, gas pressure, deposition rate and substrate temperature are determined in order to produce the cubic phase of zirconia as verified with x-ray diffraction. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y alloy target is metallic as opposed to oxide. The Zr-Y composition of the planar magnetron target is designed for optimium oxygen-ion conductivity in the YSZ films, at elevated temperature for potential use in solid-oxide fuel cells. The oxygen concentration of the as-deposited films is measured using Auger electron spectroscopy and found to principally vary as a function of the sputter deposition rate. A fuel cell is produced with the reactive deposition process using Pt electrodes from which the growth morphology of the YSZ layer is characterized using scanning electron microscopy.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
95300
Report Number(s):
UCRL-JC-118652; CONF-950454-7; ON: DE95015878
Resource Relation:
Conference: 22. international AVS conference on metallurgical coatings and thin films (ICMCTF-22), San Diego, CA (United States), 24-28 Apr 1995; Other Information: PBD: May 1995
Country of Publication:
United States
Language:
English

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