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Title: Deposition and properties of yttria-stabilized zirconia thin films using reactive direct current magnetron sputtering

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
DOI:https://doi.org/10.1116/1.577172· OSTI ID:5157941
; ; ;  [1]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science Northwestern Univ., Evanston, IL (United States). Materials Research Center

Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr--Y target in Ar--O{sub 2} mixtures. Hysteresis was observed as a function of oxygen flow rate {ital f}. For a discharge current of 0.4 A and a total pressure {ital P} of 5 mTorr, for example, the target oxidized at {ital f}{gt}2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 {mu}m/h in the metallic mode and 0.1 {mu}m/h in the oxide mode. Fully oxidized (Y{sub 2}O{sub 3}){sub 0.1}(ZrO{sub 2}){sub 0.9} was obtained for {ital f}{gt}2.0 ml/min, even in the metallic mode. While films deposited with {ital P}=3--20 mTorr were continuous, for {ital P}{gt}20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For {ital P}{lt}3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350 {degree}C. Temperature-dependent impedance spectroscopy analysis of YSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.

OSTI ID:
5157941
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Vol. 9:6; ISSN 0734-2101
Country of Publication:
United States
Language:
English