Control method and system for use when growing thin-films on semiconductor-based materials

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:874072

McKee, Rodney A ^[1]; Walker, Frederick J ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-96OR22464
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): US 6306668
• OSTI ID: 874072
• Country of Publication: United States
• Language: English

Related Subjects

control
method
growing
thin-films
semiconductor-based
materials
process
growth
film
surface
substrate
exposing
vaporized
material
vacuum
hv
facility
involves
directing
electron
beam
exposed
electrons
diffracted
monitoring
pattern
settles
monitored
achieves
condition
indicative
grown
exposure
shut
otherwise
adjusted
facilitate
adjustment
crystallographic
orientation
mechanism
altering
electron beam
substrate surface
control method
semiconductor-based material
vaporized material
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