Pulsed laser deposition (PLD) of III-V semiconductors: Epitaxial film growth and gas-phase species analyses by in situ time-of-flight mass-spectrometry
- Northwestern Univ. Evanston, IL (United States)
PLD has been used to grow epitaxial thin films of III-V semiconductors. Systematic studies have been carried out to determine growth conditions for optimizing the structural quality of PLD epilayers of GaAs/GaAs(100), InP/InP(100), and GaAs/InP(100). These studies have focussed on the effects of substrate temperature and laser pulse energy for a fixed value of laser vaporization wavelength = 532 nm (viz., the frequency doubled output of a Q-switched Nd:YAG laser). The structure and morphology of the epilayers have been measured by resonance Raman scattering, atomic force microscopy (AFM), and x-ray diffraction. These techniques have shown that the thin film (10 nm < film thickness < 300 nm) adopts the crystallographic orientation of the substrate material. It has been shown by AFM that the rms surface roughness of PLD-grown GaAs is ca. 1 nm. Also, TOF-MS has been used to investigate velocity distributions of the gas-phase species.
- OSTI ID:
- 370837
- Report Number(s):
- CONF-960376-; TRN: 96:003805-0899
- Resource Relation:
- Conference: Spring national meeting of the American Chemical Society (ACS), New Orleans, LA (United States), 24-28 Mar 1996; Other Information: PBD: 1996; Related Information: Is Part Of 211th ACS national meeting; PB: 2284 p.
- Country of Publication:
- United States
- Language:
- English
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