Multijunction photovoltaic device and method of manufacture

Patent · Sun Jan 01 00:00:00 EST 1995

OSTI ID:869812

Arya, Rejeewa R ^[1]; Catalano, Anthony W ^[2]; Bennett, Murray ^[3]

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1. Jamison, PA
2. Boulder, CO
3. Longhorne, PA

A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

• DOE Contract Number: ZM-1-19033-1
• Assignee: Amoco Corporation (Naperville, IL) [*] Notice: portion of term of this patent subsequent to September 21, 2010 has been disclaimed.
• Patent Number(s): US 5403404
• Application Number: 08/077,769
• OSTI ID: 869812
• Country of Publication: United States
• Language: English

Related Subjects

multijunction
photovoltaic
device
method
manufacture
third
amorphous
silicon
p-i-n
cells
stacked
arrangement
intrinsic
layers
formed
a-sige
alloys
differing
ratios
bandgap
respectively
decrease
uppermost
cell
lowermost
interface
layer
composed
doped
compound
disposed
respective
n-
p-type
adjacent
forms
ohmic
contact
conductivity
type
tunnel
junction
silicon compound
multijunction photovoltaic
intrinsic layer
tunnel junction
photovoltaic cells
amorphous silicon
photovoltaic device
ohmic contact
photovoltaic cell
adjacent cell
doped silicon
conductivity type
adjacent layers
stacked arrangement
interface layer
cell layer
layer forms
silicon p-i-n
/136/