Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer
Patent
·
OSTI ID:879182
- Lawrenceville, NJ
A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.
- DOE Contract Number:
- NREL-ZM-0-19033-1
- Assignee:
- Solarex Corporation (Rockville, MD)
- Patent Number(s):
- US 5256887
- Application Number:
- 07/733172
- OSTI ID:
- 879182
- Country of Publication:
- United States
- Language:
- English
Amorphous silicon solar cells with graded boron‐doped active layers
|
journal | November 1983 |
High performance hydrogenated amorphous Si solar cells with graded boron‐doped intrinsic layers prepared from disilane at high deposition rates
|
journal | June 1984 |
Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers
|
journal | October 1984 |
Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles
|
journal | January 1985 |
Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells
|
journal | August 1983 |
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