Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865945

Chen, Yok ^[1]; Gonzalez, Roberto ^[2]

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1. Oak Ridge, TN
2. Madrid, ES

Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10.sup.12 protons per cm.sup.3 and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F.sup.+ luminescence is produced when the crystal is optically excited.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: W-7405-ENG-26
• Assignee: United States of America as represented by Secretary of (Washington, DC)
• Patent Number(s): US 4604225
• OSTI ID: 865945
• Country of Publication: United States
• Language: English

Related Subjects

refractory
oxide
hosts
power
broadly
tunable
laser
quantum
efficiency
method
crystals
high-quantum
thermal
stability
host
materials
formed
removing
hydrogen
single
crystal
material
level
below
10
12
protons
cm
subsequently
thermochemically
reducing
oxygen
content
form
sufficient
anion
vacancies
short-lived
luminescence
produced
optically
excited
thermal stability
oxygen content
single crystal
removing hydrogen
oxide material
quantum efficiency
tunable laser
refractory oxide
broadly tunable
optically excited
oxide crystals
oxygen anion
host material
oxide crystal
high-quantum efficiency
host materials
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