Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867565

Chen, Yok ^[1]

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1. Oak Ridge, TN

Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Assignee: United States of America as represented by Department of Energy (Washington, DC)
• Patent Number(s): US 4963755
• OSTI ID: 867565
• Country of Publication: United States
• Language: English

Related Subjects

method
enhancement
useful
luminescence
vacancy
defects
refractory
oxides
tunable
lasers
oxide
crystals
suitable
preparing
provided
characterized
quantum
efficiency
thermal
stability
crystal
transparency
percentage
preparation
involves
removing
substantially
hydrogen
thermochemically
reducing
oxygen
content
produce
anion
subsequently
irradiating
electrons
inactivate
trace
increased
amount
lived
produced
optically
excited
tunable lasers
thermal stability
oxygen content
quantum efficiency
tunable laser
refractory oxide
refractory oxides
optically excited
oxide crystals
oxide crystal
increased amount
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