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Title: Silicon MIS/inversion-layer solar cells. Final report, October 1, 1981-September 30, 1982

Technical Report ·
DOI:https://doi.org/10.2172/6507274· OSTI ID:6507274

Silicon Metal-Insulator-Semiconductor/Inversion-Layer (MIS-IL) solar Cells were investigated as an approach to low cost terrestrial photovoltaics. Considerable progress has been made concerning the development of procedures for SiO deposition for inversion-layer formation, the characterization of the fixed chargein deposited SiO layers, surface state density at the Si-Si0 interface, fabrication and characterization of MIS-IL solar cells. Improvements were also made in the theory of MIS-IL solar cells, and utilized to calculate cell performance for a range of insulator charge and base resistivities. Inversion layer formation has been studied in several ways. MOS devices have been analyzed to determine the magnitude of the net positive charge, Q/sub POS/, versus surface potential, Psi/sub S/. In situ sheet resistance measurements have been made to determine the charge distribution within the deposited SiO layer. Finally, estimates of Q/sub POS/ obtained by comparing experimental results for MIS-IL cells and theory are compared with values of Q/sub POS/ determined for MOS structures fabricated simultaneously with the csolar cells. Cell fabrication procedures emphasized low temperature processing.

Research Organization:
Joint Center for Graduate Study, Richland, WA (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6507274
Report Number(s):
SERI/TR-1274-1-T1; ON: DE83005422
Resource Relation:
Other Information: Portions are illegible in microfiche products. Original copy available until stock is exhausted
Country of Publication:
United States
Language:
English