Silicon MIS/Inversion-Layer solar cells utilizing SiO deposition

Conference · Wed Sep 01 00:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5426051

Olsen, L C; Addis, F W; Duncan, G C; Miller, W A

Results obtained for silicon MIS/Inversion-Layer solar cells are discussed. Cells are fabricated using Al and Mg MIS collector grids, and by establishing an inversion layer with a SiO AR layer. Theory of MIS-IL cells has developed by solving the two-dimensional diffusion problem for minority carrier transport. Calculated cell performance explains experimental results quite well. Studies of the inversion layer formation process has involved studies of MOS devices and in situ measurement of inversion layer sheet resistance. An AM1 active area efficiency of 16.1% (13.4% total area efficiency) has been achieved with 0.2 ..cap omega..-cm single crystal material, while an active area efficiency of 12.8% (10.3% total area) was achieved with Wacker-Silso polycrystalline material.

• Research Organization: Joint Center for Graduate Study, Richland, VA
• OSTI ID: 5426051
• Report Number(s): CONF-820906-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 16. IEEE photovoltaics specialists conference, San Diego, CA, USA, 28 Sep 1982
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
CRYSTAL STRUCTURE
FABRICATION
ALUMINIUM
DIFFUSION
EFFICIENCY
LAYERS
MAGNESIUM
SILICON OXIDES
SOLAR COLLECTORS
SURFACE COATING
ALKALINE EARTH METALS
CHALCOGENIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
METALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion