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Title: Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

Technical Report ·
DOI:https://doi.org/10.2172/5496057· OSTI ID:5496057

This document describes the progress made in obtaining stable, a-Si-based submodules that have a large area and high efficiency. Conversion efficiencies of up to 11.95% were obtained in small-area, single-junction a-Si solar cells using textured TiO{sub 2}, superlattice p-layers, graded carbon concentrations near the p/i interface, and highly reflective ITO/silver back contacts. Single- junction a-SiC and a-SiGe p-i-n cells were also fabricated that had conversion efficiencies of 9%--11%, and some recently fabricated stacked-junction cells had conversion efficiencies of about 10%. In materials research boron-doped microcrystalline SiC films were recently developed containing up to 6 at. % carbon with conductivities of 3 {times} 10{sup {minus}3}/{Omega}-cm at room temperature and activation energies of 0.11 eV. Microcrystalline film growth was shown to be strongly influenced by the nature of the substrate, with nucleation occurring more readily on a-Si substrates than on TiO{sub 2}. Stability studies show that light-induced degradation is usually enhanced by the presence of carbon grading near the p/i interface. In general, adding either germanium (from GeH{sub 4}) or carbon (from CH{sub 4}) to the i-layer of a p-i-n cell leads to enhanced light-induced degradation. 13 refs., 80 figs., 17 tabs.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5496057
Report Number(s):
SERI/STR-211-3582; ON: DE89009495; CNN: ZB-7-06003-2
Country of Publication:
United States
Language:
English