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Title: Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

Technical Report ·
DOI:https://doi.org/10.2172/5383673· OSTI ID:5383673

This document describes efforts to improve the quality of candidate photovoltaic materials used in amorphous wide- and narrow-band-gap materials, namely, a-Si{sub 1-x}C{sub x} and a-Si{sub 1-x}Ge{sub x}. Although these alloys show a decrease in mobility-lifetime product as the fraction of silicon decreases, their optical properties show marked differences. Microcrystalline p-layer films containing carbon were prepared to evaluate their importance for achieving high open-circuit voltages. Silicon-germanium cells were studied to optimize their performance in multijunction, stacked cell structures. The best cells fabricated from the silicon-germanium alloys yielded a conversion efficiency of 10.1% with a band gap of 1.55 eV. Several alloy-based stacked cells had conversion efficiencies of more than 10%: an a-SiC/a-SiGe cell yielded 10.5% and an a-SiC:H/a-Si:H structure yielded 10.2%. Stacked-junction cells showed far less susceptibility to light-induced degradation.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5383673
Report Number(s):
SERI/STR-211-3583; ON: DE89009496
Country of Publication:
United States
Language:
English