Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer

Unarunotai, Sakulsuk; Koepke, Justin C.; Tsai, Cheng-Lin; Du, Frank; Chialvo, Cesar E.; Murata, Yuya; Haasch, Rick; Petrov, Ivan; Mason, Nadya; Shim, Moonsub; Lyding, Joseph; Rogers, John A.

doi:10.1021/nn101896a

Title: Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · ACS Nano

DOI:https://doi.org/10.1021/nn101896a· OSTI ID:1875530

Unarunotai, Sakulsuk ^[1]; Koepke, Justin C. ^[2]; Tsai, Cheng-Lin ^[2]; Du, Frank ^[2]; Chialvo, Cesar E. ^[2]; Murata, Yuya ^[2]; Haasch, Rick ^[2]; Petrov, Ivan ^[2]; Mason, Nadya ^[2]; Shim, Moonsub ^[2]; Lyding, Joseph ^[2]; Rogers, John A. ^[2]

Univ. of Illinois at Urbana-Champaign, IL (United States); Chulalongkorn Univ., Bangkok (Thailand)
Univ. of Illinois at Urbana-Champaign, IL (United States)

Here we report a technique for transferring graphene layers, one by one, from a multilayer deposit formed by epitaxial growth on the Si-terminated face of a 6H-SiC substrate. The procedure uses a bilayer film of palladium/polyimide deposited onto the graphene coated SiC, which is then mechanically peeled away and placed on a target substrate. Orthogonal etching of the palladium and polyimide leaves isolated sheets of graphene with sizes of square centimeters. Repeating these steps transfers additional sheets from the same SiC substrate. Raman spectroscopy, scanning tunneling spectroscopy, low-energy electron diffraction and X-ray photoelectron spectroscopy, together with scanning tunneling, atomic force, optical, and scanning electron microscopy reveal key properties of the materials. The sheet resistances determined from measurements of four point probe devices were found to be ~2 kΩ/square, close to expectation. As a result, graphene crossbar structures fabricated in stacked configurations demonstrate the versatility of the procedures.

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Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46471; FG02-07ER46453

OSTI ID:: 1875530

Journal Information:: ACS Nano, Vol. 4, Issue 10; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Progress and Challenges in Transfer of Large-Area Graphene Films Chen, Yi; Gong, Xiao-Lei; Gai, Jing-Gang Advanced Science, Vol. 3, Issue 8 https://doi.org/10.1002/advs.201500343	journal	February 2016
Synthesis, assembly and applications of semiconductor nanomembranes Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G. Nature, Vol. 477, Issue 7362, p. 45-53 https://doi.org/10.1038/nature10381	journal	September 2011
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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Title: Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer

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