Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864155· OSTI ID:22283237

Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki ^[1]; Tajiri, Takayuki; Kohno, Atsushi ^[2]; Takahashi, Kazutoshi ^[3]

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1. Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180 (Japan)
2. Department of Applied Physics, Fukuoka University, Fukuoka 814-0180 (Japan)
3. Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K{sup ¯} point as well as a characteristic peak in a C{sub 1s} core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped.

• OSTI ID: 22283237
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CLATHRATES
COPPER
CRYSTAL STRUCTURE
DOPED MATERIALS
FABRICATION
GRAPHENE
LAYERS
PHOTOEMISSION
SCANNING TUNNELING MICROSCOPY
SILICON CARBIDES
SUBSTRATES
SURFACES