AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Yang, Tsung-Han; Brown, Jesse; Fu, Kai; Zhou, Jingan; Hatch, Kevin; Yang, Chen; Montes, Jossue; Qi, Xin; Fu, Houqiang; Nemanich, Robert J.; Zhao, Yuji

doi:10.1063/5.0027885

Title: AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Journal Article · Mon Feb 15 00:00:00 EST 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0027885· OSTI ID:1831082

^[1]; Brown, Jesse ^[1];

^[1];

^[1]; Hatch, Kevin ^[1];

^[1]; Montes, Jossue ^[1];

^[1];

^[2];

^[1];

^[1]

Arizona State Univ., Tempe, AZ (United States)
Iowa State Univ., Ames, IA (United States)

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10^–8 mA/mm, a high on/off current ratio of 10⁹, a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D_it) is estimated to be less than 8.49 × 10¹¹ cm^–2 eV^–1. Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: SC0021230; AR0000868

OSTI ID:: 1831082

Alternate ID(s):: OSTI ID: 1765933

Journal Information:: Applied Physics Letters, Vol. 118, Issue 7; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

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