Interfacial band configuration and electrical properties of LaAlO{sub 3}/Al{sub 2}O{sub 3}/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Journal Article · Wed Aug 28 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4819108· OSTI ID:22218101

Liu, J. W.; Liao, M. Y.; Imura, M. ^[1]; Oosato, H.; Watanabe, E. ^[2]; Tanaka, A.; Iwai, H. ^[3]; Koide, Y. ^[1]

---

1. Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
2. Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
3. Materials Analysis Station, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO{sub 3} films with thin Al{sub 2}O{sub 3} buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 μm have been investigated. The valence and conduction band offsets of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3} structure are measured by X-ray photoelectron spectroscopy to be 1.1 ± 0.2 and 1.6 ± 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO{sub 3} is evaluated to be 4.0 ± 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond MOS diode is smaller than 10{sup −8} A cm{sup −2} at gate bias from −4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from −3.6 ± 0.1 to −5.0 ± 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 μm are −7.5 mA mm{sup −1} and 2.3 ± 0.1 mS mm{sup −1}, respectively. The enhancement mode SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices.

• OSTI ID: 22218101
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINATES
ALUMINIUM OXIDES
CAPACITANCE
CARRIER DENSITY
CHARGE DENSITY
DEPOSITION
DIAMONDS
ELECTRIC POTENTIAL
HYDROGENATION
LANTHANUM COMPOUNDS
LEAKAGE CURRENT
MOSFET
PERMITTIVITY
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPUTTERING
X-RAY PHOTOELECTRON SPECTROSCOPY