Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides
Journal Article
·
· Journal of Crystal Growth
- The Ohio State Univ., Columbus, OH (United States)
- Univ. of California, Riverside, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- The Ohio State Univ., Columbus, OH (United States); Univ. of California, Riverside, CA (United States)
Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1259540
- Alternate ID(s):
- OSTI ID: 1359323
- Report Number(s):
- SAND2015-10742J; PII: S0022024816302032
- Journal Information:
- Journal of Crystal Growth, Vol. 447, Issue C; ISSN 0022-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 5 works
Citation information provided by
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