Ultrathin Ruthenium Films on Graphene Buffered SiO2 via Quasi Van der Waals Epitaxy

Lu, Zonghuan; Zhang, Lihua; Wen, Xixing; Jog, Atharv; Kisslinger, Kim; Gao, Lei; Shi, Jian; Gall, Daniel; Washington, Morris A.; Wang, Gwo-Ching; Lu, Toh-Ming

doi:10.1021/acsaelm.2c00963

Title: Ultrathin Ruthenium Films on Graphene Buffered SiO₂ via Quasi Van der Waals Epitaxy

Journal Article · Wed Dec 07 00:00:00 EST 2022 · ACS Applied Electronic Materials

DOI:https://doi.org/10.1021/acsaelm.2c00963· OSTI ID:1907835

^[1];

^[2]; Wen, Xixing ^[1]; Jog, Atharv ^[1]; Kisslinger, Kim ^[2];

^[3];

^[1];

^[1]; Washington, Morris A. ^[1]; Wang, Gwo-Ching ^[1]; Lu, Toh-Ming ^[1]

Rensselaer Polytechnic Inst., Troy, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Univ. of Science and Technology, Beijing (China)

In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare single crystalline Ru ultrathin film on large scale, monolayer graphene. Physical and epitaxial properties of bulk, near surface and surface of ultrathin Ru films were comprehensively studied using various structural, morphological, compositional, and electrical characterization techniques. Here, we confirm that Ru can epitaxially grow on single, monolayer graphene using magnetron sputtering at elevated temperature of 600 °C. The epitaxial Ru films with film thickness ranging from 94.2 nm down to 3.9 nm show the (0001) out-of-plane orientation. The epitaxial relationships between Ru and graphene are out-of-plane Ru(0001) || graphene(0001) and in-plane Ru[$$11\bar20$$] || graphene[$$11\bar20$$]. All the Ru films show smooth surfaces with root-mean-square roughness less than 0.8 nm and have negligible oxide layer on the surfaces. The Ru films on graphene demonstrate significantly reduced electrical resistivity comparing to their counterpart grown on bare SiO₂, which show polycrystalline nature. For 7.1 to 3.9 nm film thicknesses, the resistivity of Ru on graphene shows 38 to 45% resistivity decrease from that of Ru film on bare SiO₂ without graphene. Our observations suggest the existence of the above-classical van der Waals interaction between Ru and graphene. On the other hand, graphene is capable of effectively blocking the inter-diffusion/interaction between Ru and SiO₂ during a 1000 °C annealing process.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); NYSTAR Focus Center

Grant/Contract Number:: SC0012704; C180117

OSTI ID:: 1907835

Report Number(s):: BNL-223852-2023-JAAM

Journal Information:: ACS Applied Electronic Materials, Vol. 4, Issue 12; ISSN 2637-6113

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Ultrathin Ruthenium Films on Graphene Buffered SiO2 via Quasi Van der Waals Epitaxy

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Title: Ultrathin Ruthenium Films on Graphene Buffered SiO₂ via Quasi Van der Waals Epitaxy